1/9 december 2000 STB18N20 n-channel 200v - 0.145 w - 18a i 2 pak/d 2 pak power mosfet transistor n typical rds(on) = 0.145 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100oc n low gate charge n very high current capability n application oriented characterization n through-hole i2pak (to-262) power package in tube (suffix -1") n surface-mounting d2pak (to- 263) power package in tube (no suffix) or in tape & reel (suffix t4") applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n motor control, audio amplifiers n automotive environment (injection, abs, air-bag, lampdrivers, etc.) type v dss r ds(on) i d STB18N20 200 v <0.18 w 18 a d 2 pak to-263 (suffixt4) 1 3 1 2 3 i 2 pak to-262 (suffix-1) absolute maximum ratings ( )pulse width limited by safe operating area. symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dgr drain-gate voltage (r gs = 20 k w ) 200 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 18 a i d drain current (continuos) at t c = 100c 11 a i dm ( ) drain current (pulsed) 72 a p tot total dissipation at t c = 25c 125 w derating factor 1 w/c t stg storage temperature C60 to 150 c t j max. operating junction temperature 150 c internal schematic diagram
STB18N20 2/9 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) dynamic r thj-case r thj-amb r thc-sink t j thermal resistance junction-case thermal resistance junction-ambient thermal resistance case-sink maximum lead temperature for soldering purpose max max typ 1 62.5 0.5 300 c/w c/w c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max d < 1%) 18 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 25 v) 50 mj e ar repetitive avalanche energy (pulse width limited by t j max) 10 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 11 a symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 250 1000 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 2 3 4 v i ds(on) static drain-source on resis- tance v gs = 10 v i d = 9 a 0.145 0.18 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs =10 v 18 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =9 a 6.5 13 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitances v ds = 25v f = 1 mhz v gs = 0 1600 270 50 2100 350 70 pf pf pf
3/9 STB18N20 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 100v i d = 18 a r g = 9.1 w v gs = 10 v (see test circuit, figure 3) 20 75 30 105 ns ns (di/dt) on turn-on current slope v dd = 100v i d = 18 a r g = 9.1 w v gs = 10 v 470 a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge i d = 18 a v gs = 10 v v dd = max rating x 0.8 57 11 26 80 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t r t c off-voltage rise time fall time cross-over time v dd = 160 v i d = 18 a r g = 9.1 w v gs = 10 v (see test circuit, figure 5) 40 35 75 55 50 105 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 18 72 a a v sd (*) forward on voltage i sd = 18 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 18 a di/dt = 100 a/s v dd = 100v t j = 150 c (see test circuit, figure 3) 300 3.3 22 ns m c a electrical characteristics (continued) thermal impedance safe operating area
STB18N20 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/9 STB18N20 normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature
STB18N20 6/9 fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 1: unclamped inductive load test circuit
7/9 STB18N20 symb mm inches typ min max typ min max a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 i 2 pak mechanical data
STB18N20 8/9 d 2 pak mechanical data dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o
9/9 STB18N20 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics ? 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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